![]() However, without top covering, the channel is exposed to the atmosphere. This device architecture may lower the influence of dielectric/2D-material interfaces on 2D channels. In previous works, it has been shown that transistors with in-plane gates can be realized on compound semiconductors 21, 22. The other possible solution may be the adoption of different device architecture without dielectric/2D-material interfaces. Due to the atomically flat surface and wide bandgap value of h-BN, superior device performances are obtained for such bottom-gate graphene transistors 19, 20. One possible approach to solve this problem is to use dielectric 2D materials such as hexagonal boron nitride (h-BN) as the interface layers to the SiO 2 dielectrics. Since the top gate scheme is the most common device architecture adopted for field-effect transistors (FETs) in industry, a poor dielectric/2D-material interface can easily degrade the performance of thin 2D transistors 16, 17, 18. With an active region down to nanoscale, little room is left for 2D channels vertically. However, the characteristics of thin body also hinder the practical usage of 2D materials. On the hand, since the unique material characteristics of 2D materials can be observed in a few atomic layers, devices with ultra-thin bodies can be fabricated on these materials, making them a promising candidate for advanced electronics with reduced linewidth 12, 13, 14, 15. Despite its zero-bandgap nature, the high mobility of the first discovered 2D material, graphene, have demonstrated its potential in the application of radio-frequency devices 7, 8, 9, 10, 11. The high mobility and bright luminescence of two-dimensional (2D) materials are their major advantages in device applications 1, 2, 3, 4, 5, 6.
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